General Description
The AOT20S60L & AOB20S60L & AOTF20S60L & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS @ Tj,max 700V
IDM 80A
RDS(ON),max 0.199Ω
Qg,typ 20nC
Eoss @ 400V 4.9µJ
100% UIS Tested
100% Rg Tested
Descriptions
IGBT 650V 60A 45W Through Hole TO-220
Trans IGBT Chip N-CH 650V 40A 45000mW 3-Pin(3+Tab) TO-220F Tube
